? semiconductor components industries, llc, 2013 september, 2016 ? rev. 15 1 publication order number: mjd122/d mjd122, njvmjd122 (npn), mjd127, njvmjd127 (pnp) complementary darlington power transistor dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. features ? lead formed for surface mount applications in plastic sleeves ? surface mount replacements for 2n6040?2n6045 series, tip120?tip122 series, and tip125?tip127 series ? monolithic construction with built?in base?emitter shunt resistors ? high dc current gain: h fe = 2500 (typ) @ i c = 4.0 adc ? epoxy meets ul 94 v?0 @ 0.125 in ? esd ratings: ? human body model, 3b > 8000 v ? machine model, c > 400 v ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant marking diagram a = assembly location y = year ww = work week x = 2 or 7 g = pb?free package dpak case 369c style 1 ayww j12xg silicon power transistor 8 amperes 100 volts, 20 watts www. onsemi.com collector 2, 4 base 1 emitter 3 see detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. ordering information
mjd122, njvmjd122 (npn), mjd127, njvmjd127 (pnp) www. onsemi.com 2 maximum ratings rating symbol value unit collector?emitter voltage v ceo 100 vdc collector?base voltage v cb 100 vdc emitter?base voltage v eb 5 vdc collector current continuous peak i c 8 16 adc base current i b 120 madc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c total power dissipation (note 1) @ t a = 25 c derate above 25 c p d 1.75 0.014 w w/ c operating and storage junction temperature range t j , t stg ?65 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 6.25 c/w thermal resistance, junction?to?ambient (note1) r ja 71.4 c/w 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended.
mjd122, njvmjd122 (npn), mjd127, njvmjd127 (pnp) www. onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (i c = 30 madc, i b = 0) v ceo(sus) 100 ? vdc collector cutoff current (v ce = 50 vdc, i b = 0) i ceo ? 10 adc collector cutoff current (v cb = 100 vdc, i e = 0) i cbo ? 10 adc emitter cutoff current (v be = 5 vdc, i c = 0) i ebo ? 2 madc on characteristics dc current gain (i c = 4 adc, v ce = 4 vdc) (i c = 8 adc, v ce = 4 vdc) h fe 1000 100 12,000 ? ? collector?emitter saturation voltage (i c = 4 adc, i b = 16 madc) (i c = 8 adc, i b = 80 madc) v ce(sat) ? ? 2 4 vdc base?emitter saturation voltage (note 2) (i c = 8 adc, i b = 80 madc) v be(sat) ? 4.5 vdc base?emitter on voltage (i c = 4 adc, v ce = 4 vdc) v be(on) ? 2.8 vdc dynamic characteristics current?gain?bandwidth product (i c = 3 adc, v ce = 4 vdc, f = 1 mhz) |h fe | 4 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mjd127, njvmjd127 mjd122, njvmjd122 c ob ? ? 300 200 pf small?signal current gain (i c = 3 adc, v ce = 4 vdc, f = 1 khz) h fe 300 ? ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2%. figure 1. power derating 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t a surface mount t c
mjd122, njvmjd122 (npn), mjd127, njvmjd127 (pnp) www. onsemi.com 4 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) i c , collector current (amp) 500 0.2 5000 2000 10,000 h fe , dc current gain 0.1 0.7 3000 0.5 1 20,000 1000 23 5 3 i b , base current (ma) 2.6 2.2 1.8 1.4 0.3 0.5 1 7 35 2 1 i c , collector current (amp) 2 1.5 v, voltage (volts) 3 2.5 1 0.5 0.2 3 0.1 0.7 0.3 1 5 10 20 30 200 300 0.3 7 10 0.7 0.5 7 2 1 0 pnp mjd127 npn mjd122 i c , collector current (amp) 500 0.2 5000 2000 10,000 h fe , dc current gain v ce = 4 v t j = 150 c 7000 0.1 0.7 25 c -55 c 3000 0.5 1 20,000 700 1000 23 5 3 i b , base current (ma) 2.6 2.2 1.8 1.4 0.3 0.5 1 7 35 4 a i c = 2 a 2 t j = 25 c 1 i c , collector current (amp) 2 1.5 v, voltage (volts) 3 2.5 1 0.5 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 4 v v ce(sat) @ i c /i b = 250 0.2 3 0.1 0.7 0.3 1 5 10 20 30 figure 2. dc current gain figure 3. collector saturation region figure 4. ?on? voltages 200 300 0.3 7 10 0.7 0.5 7 2 10 6 a v ce = 4 v t j = 150 c 25 c -55 c t j = 25 c 4 a i c = 2 a 6 a t j = 25 c v be @ v ce = 4 v v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 typical electrical characteristics
mjd122, njvmjd122 (npn), mjd127, njvmjd127 (pnp) www. onsemi.com 5 v , temperature coefficients (mv/ c) i c , collector current (amp) 0.2 *i c /i b h fe/3 0.1 -55 c to 25 c 123 10 10 4 v be , base-emitter voltage (volts) 10 -1 0 +0.4 , collector current (a) i c 10 3 10 2 10 1 10 0 -0.2 -0.4 -0.6 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 +0.6 +0.2 -0.8 -1 -1.2 -1.4 10 4 v be , base-emitter voltage (volts) 10 -1 , collector current (a) i c 10 3 10 2 10 1 10 0 10 5 +5 -5 vb for v be 25 c to 150 c vc for v ce(sat) figure 5. temperature coefficients v r , reverse voltage (volts) c ib 30 1 5 20 100 t j = 25 c 300 50 70 100 0.1 2 10 50 pnp npn 0.5 0.2 figure 6. collector cut?off region figure 7. small?signal current gain 1 f, frequency (khz) 100 210 500 5000 t c = 25 c v ce = 4 vdc i c = 3 adc 3000 550 20 100 10,000 200 300 200 500 1000 pnp mjd127 npn mjd122 -4 -3 -2 -1 0 +4 +3 +2 +1 0.5 0.3 7 5 i c , collector current (amp) 0.2 0.1 1 2 3 0.5 0.3 7 5 2000 1000 10 50 20 30 pnp npn 200 figure 8. capacitance v , temperature coefficients (mv/ c) +5 -5 -4 -3 -2 -1 0 +4 +3 +2 +1 0.7 10 0 -0.4 +0.2 +0.4 +0.6 -0.6 -0.2 +0.8 +1 +1.2 +1.4 h fe , small-signal current gain c, capacitance (pf) -55 c to 25 c 25 c to 150 c *i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c * vc for v ce(sat) vb for v be reverse forward v ce = 30 v t j = 150 c 100 c 25 c c ob typical electrical characteristics
mjd122, njvmjd122 (npn), mjd127, njvmjd127 (pnp) www. onsemi.com 6 t, time or pulse width (ms) 1 0.01 100 0 0.3 0.2 0.07 r(t), effective transient r jc(t) = r(t) r jc r jc = 6.25 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 thermal resistance (normalized) 0.7 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 single pulse d = 0.5 0.05 0.1 0.5 3 0.3 0.2 0.7 1 5 i c , collector current (amp) v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c t, time (s) 3 2 0.7 0.5 0.3 0.2 t s t f t r t d @ v be(off) = 0 v pnp npn figure 9. switching times test circuit figure 10. switching times 0.1 1 10 7 5 2 figure 11. thermal response v 2 a pprox +8 v 0 8 k scope v cc -30 v r c 51 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. 25 s t r , t f 10 ns duty cycle = 1% + 4 v r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v 1 a pprox -12 v tut r b d 1 120 0.07 0.05 0.1 0.01 i c , collector current (amp) 5 v ce , collector-emitter voltage (volts) 0.3 100 5 2 0.5 0.2 bonding wire limit thermal limit t c = 25 c (single pulse) second breakdown limit 10 50 7 t j = 150 c 100 1ms dc 0.1 1 3 15 20 30 20 70 curves apply below rated v ceo 5ms figure 12. maximum forward bias safe operating rea 3 2 1 10 0.05 0.02 0.03 500 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 12 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 11. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd122, njvmjd122 (npn), mjd127, njvmjd127 (pnp) www. onsemi.com 7 figure 13. darlington schematic base emitter collector 8 k 120 pnp base emitter collector 8 k 120 npn ordering information device package type shipping ? mjd122g dpak (pb?free) 75 units / rail mjd122t4g dpak (pb?free) 2,500 / tape & reel njvmjd122t4g* dpak (pb?free) 2,500 / tape & reel mjd127g dpak (pb?free) 75 units / rail mjd127t4g dpak (pb?free) 2,500 / tape & reel NJVMJD127T4G* dpak (pb?free) 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable
mjd122, njvmjd122 (npn), mjd127, njvmjd127 (pnp) www. onsemi.com 8 package dimensions dpak (single gauge) case 369c issue f style 1: pin 1. base 2. collector 3. emitter 4. collector b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate constructions note 7 z on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mjd122/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
|
